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Official Raspberry Pi 4 Case Red White
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TK22E10N1 N-Channel Silicon MOSFET
Specifications:
- Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V)
- Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
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₹65.00 (+18% GST Extra)
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For bulk orders or B2B inquiries, please contact us at: [email protected]
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Pick up from the RoboticsDNA Store in Pune / Dunzo
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Same Day Delivery in Pune
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via Delhivery.com (Express Mode)
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3-5 Days
Rs. 149
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via Delhivery.com (Surface Mode)
Our courier will deliver to the specified address
4-7 Days
Rs. 69
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Description
The TK22E10N1Â N-Channel Silicon MOSFET is a 100V single N channel HEXFET power MOSFET. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications like switching voltage regulators.
Features:
- Low drain-source on-resistance.
- Low leakage current.
- Enhancement mode.
Package Include:
1 x TK22E10N1 N-Channel Silicon MOSFET
Specification
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