Features:

1. Logic level translation – to enable 5V logic to communicate with ±5V analogue signals
2. Typical break before make built-in
3. ESD protection HBM JESD22-A114F exceeds 2000V

Features:-

1. Supply Voltage: 7V
2. 3-STATE outputs drive bus lines directly
3.  PNP inputs reduce DC loading on bus lines
4.  Hysteresis at data inputs improves noise margins
5. Typical IOL (sink current) 24 mA
6.  Typical IOH (source current) −15 mA
7.  Typical propagation delay times Inverting 10.5 ns Noninverting 12 ns
8.  Typical enable/disable time 18 ns
9.  Typical power dissipation (enabled) Inverting 130 mW Noninverting 135 mW

Specifications:

• High Voltage : VCBO = 1500 V
• Low Saturation Voltage : VCE (sat) = 5 V (Max.)
• High Speed : tf = 0.4 µs (Typ.)
• Collector Metal (Fin) is Fully Covered with Mold Resin

Specifications:

1. High Voltage : Vcbo = 1500V
   2. Low Saturation Voltage : Vce(sat) = 5V (Max.)
   3. High Speed : tf = 0.3us (Typ.)
   4. Built-in Damper Type
   5. Collector Metal (Fin) is Fully Covered with Mold Resin.

Specifications

1. VDD Supply Voltage :-0.5 to +22 V
2. VI DC Input Voltage :-0.5 to VDD + 0.5 V
3. DC Input Current :± 10 mA
4. PD Power Dissipation per Package :200 mW
5. Power Dissipation per Output Transistor :100 mW
6. Top Operating Temperature: -55 to +125 °C
7.  Storage Temperature: -65 to +150 °C

Features:

• PROPAGATION DELAY TIME : tPD = 40ns (TYP.) at VDD = 10V CL = 50pF
• HIGH TO LOW LEVEL LOGIC CONVERSION
• HIGH “SINK” AND “SOURCE” CURRENT CAPABILITY
• QUIESCENT CURRENT SPECIFIED UP TO 20V
• 5V, 10V AND 15V PARAMETRIC RATINGS
• INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C
• 100% TESTED FOR QUIESCENT CURRENT