Features:

1. Logic level translation – to enable 5V logic to communicate with ±5V analogue signals
2. Typical break before make built-in
3. ESD protection HBM JESD22-A114F exceeds 2000V

Features:-

1. Supply Voltage: 7V
2. 3-STATE outputs drive bus lines directly
3.  PNP inputs reduce DC loading on bus lines
4.  Hysteresis at data inputs improves noise margins
5. Typical IOL (sink current) 24 mA
6.  Typical IOH (source current) −15 mA
7.  Typical propagation delay times Inverting 10.5 ns Noninverting 12 ns
8.  Typical enable/disable time 18 ns
9.  Typical power dissipation (enabled) Inverting 130 mW Noninverting 135 mW

Features:

• Optimized for Quasi-Resonant Converter (QRC)
• Advanced Burst-Mode Operation for under 1W Standby
Power Consumption
• Pulse-by-Pulse Current Limit
• Over Load Protection (OLP) – Auto Restart
• Over Voltage Protection (OVP) – Auto Restart
• Abnormal Over Current Protection (AOCP) – Latch
• Internal Thermal Shutdown (TSD) – Latch
• Under Voltage Lock Out (UVLO) with Hysteresis
• Low Startup Current (typical : 25uA)
• Internal High Voltage SenseFET
• Built-in Soft Start (20ms)
• Extended Quasi-Resonant Switching

Specifications:

• High Voltage : VCBO = 1500 V
• Low Saturation Voltage : VCE (sat) = 5 V (Max.)
• High Speed : tf = 0.4 µs (Typ.)
• Collector Metal (Fin) is Fully Covered with Mold Resin

Specifications

1. VDD Supply Voltage :-0.5 to +22 V
2. VI DC Input Voltage :-0.5 to VDD + 0.5 V
3. DC Input Current :± 10 mA
4. PD Power Dissipation per Package :200 mW
5. Power Dissipation per Output Transistor :100 mW
6. Top Operating Temperature: -55 to +125 °C
7.  Storage Temperature: -65 to +150 °C