MJD122G J122G TO252 8A / 100V NPN Darlington
₹23.60 (Inc. GST)₹20.00 (+18% GST Extra)
Specifications :
- Transistor Polarity :NPN
- Collector- Emitter Voltage VCEO Max :100 V
- Emitter- Base Voltage VEBO :5 V
- Collector- Base Voltage VCBO :100 V
- Maximum DC Collector Current :8 A
- Maximum Collector Cut-off Current :10 uA
- Pd – Power Dissipation :20 W
- Continuous Collector Current :8 A
- DC Collector/Base Gain hfe Min :1000
- Operating Temperature :-65°C to +150°C
- Mounting Style :SMD/SMT
- Dimension :6.73 x 6.22 x 2.38 MM
In stock
CompareDescription
The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
- Lead formed for surface mount applications in plastic sleeves
- High DC current gain
- Epoxy meets UL 94V-0 rating
- AEC-Q101 qualified
Package Includes:
- 1 x MJD122G J122G TO252 8A / 100V NPN Darlington
Only logged in customers who have purchased this product may leave a review.
Reviews
There are no reviews yet.