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MJD122G J122G TO252 8A / 100V NPN Darlington

23.60 (Inc. GST)20.00 (+18% GST Extra)

Specifications :

  • Transistor Polarity :NPN
  • Collector- Emitter Voltage VCEO Max :100 V
  • Emitter- Base Voltage VEBO :5 V
  • Collector- Base Voltage VCBO :100 V
  • Maximum DC Collector Current :8 A
  • Maximum Collector Cut-off Current :10 uA
  • Pd – Power Dissipation :20 W
  • Continuous Collector Current :8 A
  • DC Collector/Base Gain hfe Min :1000
  • Operating Temperature :-65°C to +150°C
  • Mounting Style :SMD/SMT
  • Dimension :6.73 x 6.22 x 2.38 MM

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SKU: RDNA-126.4 Category:

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Description

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.

  • Lead formed for surface mount applications in plastic sleeves
  • High DC current gain
  • Epoxy meets UL 94V-0 rating
  • AEC-Q101 qualified

Package Includes:

  • 1 x MJD122G J122G TO252 8A / 100V NPN Darlington

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