IRF530N Power MOSFET

Specification:

Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25°C

SKU: RDNA-48.7

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Description

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.