20N60C3 TO247 Power Transistor

Specifications:

1. FET Type: N-Channel
2. Technology: MOSFET (Metal Oxide)
3. Drain to Source Voltage (Vdss): 650V
4. Current – Continuous Drain (Id): @ 25°C 20.7A (Tc)
5. Drive Voltage (Max Rds On, Min Rds On): 10V
6. Rds On (Max): @ Id, Vgs 190mOhm @ 13.1A, 10V
7. Vgs(th) (Max): @ Id 3.9V @ 1mA
8. Gate Charge (Qg) (Max): @ Vgs 114nC @ 10V
9. Vgs (Max): ±20V
10. Input Capacitance (Ciss) (Max): @ Vds 2400pF @ 25V
11. Power Dissipation (Max): 208W (Tc)
12. Operating Temperature: -55°C ~ 150°C (TJ)
13. Mounting Type: Through Hole