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TK22E10N1 N-Channel Silicon MOSFET

Specifications:

  • Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
  • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
SKU: RDNA-45.6

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76.70 (Inc. GST)
65.00 (+18% GST Extra)

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  • Pick up from the RoboticsDNA Store in Pune / Dunzo

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  • Same Day Delivery in Pune

(Mon-Sat) (Please Place Order Before 1:30 PM)​

Rs. 99

  • via Delhivery.com (Express Mode)

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3-5 Days

Rs. 149

  • via Delhivery.com (Surface Mode)

Our courier will deliver to the specified address

4-7 Days

Rs. 69

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Description

The TK22E10N1 N-Channel Silicon MOSFET is a 100V single N channel HEXFET power MOSFET. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications like switching voltage regulators.

Features:

  1. Low drain-source on-resistance.
  2. Low leakage current.
  3. Enhancement mode.

Datasheet available here.

Package Include:

1 x TK22E10N1 N-Channel Silicon MOSFET

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