P80NF70 MOSFET IC

Specifications :

  • Drain-source voltage  : 68 V
  • Gate-source voltage :  +20V
  • Drain current (continuous)  : 98 C
  • Derating factor :1.27W/°C
SKU: RDNA-X3.37

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53.10 (Inc. GST)
45.00 (+18% GST Extra)

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Description

The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique
STripFETâ„¢ process. It has specifically been designed to minimize input capacitance and gatecharge. The device is therefore suitable in advanced high-efficiency switching applications.

Package Includes:

1 x P80NF70 MOSFET IC

Specification

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RAM

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