MJE13007A NPN Switching Transistor

Specifications:

1. Package Type: TO-92
2. Transistor Type: NPN
3. Max Collector Current(I_C): 150mA
4. Max Collector-Emitter Voltage (V_CE): 50V
5. Max Collector-Base Voltage (V_CB): 60V
6. Max Emitter-Base Voltage (VEBO): 5V
7. Max Collector Dissipation (Pc): 400 miliWatt
8. Max Transition Frequency (fT): 80 MHz
9. Minimum & Maximum DC Current Gain (h_FE): 70 – 700
10. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

Specifications:

1. Type: p-n-p
2. Power Dissipation: 0.4watts
3. High voltage and High current: Vceo = 50v and Ic = 150mA
4. Low Noise: 1dB
5. Case Material: molded plastic
6. Collector power dissipation: 400mW
7. DC current gain: 400
8. Collector Emitter and Collector Base breakdown voltage: 50Vdc
9. Base Emitter Saturation Voltage: 1.1Vdc
10. Collector-Emitter Saturation Voltage: 0.3Vdc
11. Base Emitter voltage: 1.45Vdc
12. Complementary to 2SC1815
13. Operating Temperature and Storage Temperature: -55℃ to +150℃

Features:

1. PNP Silicon Planar Epitaxial Transistors.
2. Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers

Specifications:

1. Bi-Polar high current NPN Transistor
2. DC Current Gain (h_FE) is 100
3. Continuous Collector current (I_C) is 800mA
4. Emitter Base Voltage (V_BE) is 6V
5. Collector Emitter Voltage (V_CE) is 30V
6. Base Current(I_B) is 5mA maximum
7. Available in To-92 Package

Specifications:

1. Peak Repetitive Off-State Voltage (V):600
2. On-State RMS Current (A): 16
3. Peak Gate Current (A): 4
4. Peak Gate Power (W): 20
5. Operating Junction Temperature Range (°C) : -40 to +125
6. Storage condition:-40°C to +125 °C