MJE13007A NPN Switching Transistor

Specifications:

1. Type: p-n-p
2. Power Dissipation: 0.4watts
3. High voltage and High current: Vceo = 50v and Ic = 150mA
4. Low Noise: 1dB
5. Case Material: molded plastic
6. Collector power dissipation: 400mW
7. DC current gain: 400
8. Collector Emitter and Collector Base breakdown voltage: 50Vdc
9. Base Emitter Saturation Voltage: 1.1Vdc
10. Collector-Emitter Saturation Voltage: 0.3Vdc
11. Base Emitter voltage: 1.45Vdc
12. Complementary to 2SC1815
13. Operating Temperature and Storage Temperature: -55℃ to +150℃

Features:

1. PNP Silicon Planar Epitaxial Transistors.
2. Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers

Specifications:

1. N-Channel VHF/UHF Amplifier
2. Drain-Source Voltage: 30V
3. Drain-Gate Voltage: 30V
4. Total Power Dissipation: 300mW
5. Drain Current: 20mA
6. Package: TO-72(TO-206A)

Specifications:-

1. Transistor Polarity: PNP
2. Collector-Base Voltage (VCBO): 50V
3. Collector-Emitter Voltage (VCEO): 50V
4. Emitter-Base Voltage (VEBO): 5V
5. Continuous Collector Current (IC): 150mA
6. Emitter Current (IE): 150mA
7. Transition Frequency (fT): 80MHz
8. DC Current Gain (hFE): 70-400
9. Operating Temperature Range: -55 – 125°C
10. Power Dissipation (PD): 400mW

Specifications:

1. Peak Repetitive Off-State Voltage (V): 600
2. On-State RMS Current (A): 25
3. Peak Gate Current (A): 4
4. Peak Gate Power (W): 20
5. Operating Junction Temperature Range (°C): -40 to +125
6. Storage condition: -40°C to +125 °C