MJD122G J122G TO252 8A / 100V NPN Darlington

Specifications :

Transistor Polarity :NPN
Collector- Emitter Voltage VCEO Max :100 V
Emitter- Base Voltage VEBO :5 V
Collector- Base Voltage VCBO :100 V
Maximum DC Collector Current :8 A
Maximum Collector Cut-off Current :10 uA
Pd – Power Dissipation :20 W
Continuous Collector Current :8 A
DC Collector/Base Gain hfe Min :1000
Operating Temperature :-65°C to +150°C
Mounting Style :SMD/SMT
Dimension :6.73 x 6.22 x 2.38 MM

SKU: RDNA-126.4

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Description

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.