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IRFZ44N MOSFET

Specifications:

  • Number of Channels : 1 Channel
  • Transistor Polarity :N-Channel
  • Drain-Source Breakdown Voltage (Vds) :55V
  • Continuous Drain Current (Id) :49A
  • Drain-Source Resistance (Rds On) :0.0175Ohms
  • Gate-Source Voltage (Vgs) : 20V
  • Gate Charge (Qg) :63 nC
  • Operating Temperature Range :-55 – 175°C
  • Power Dissipation (Pd) :94W
SKU: RDNA-100.9

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₹41.30 (Inc. GST)
₹35.00 (+18% GST Extra)

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  • Pick up from the RoboticsDNA Store in Pune / Dunzo

To pick up today

Free

  • Same Day Delivery in Pune

(Mon-Sat) (Please Place Order Before 1:30 PM)​

Rs. 99

  • via Delhivery.com (Express Mode)

Our courier will deliver to the specified address

3-5 Days

Rs. 149

  • via Delhivery.com (Surface Mode)

Our courier will deliver to the specified address

4-7 Days

Rs. 69

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Description

IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

  •  Advanced Process Technology
  •  Ultra Low On-Resistance
  • 175°C Operating Temperature
  •  Fast Switching
  •  Repetitive Avalanche Allowed up to Tjmax
  •  Lead-Free, RoHS Compliant

Package Includes:

1 x IRFZ44N MOSFET

 

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