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IRF540N MOSFET

 Features:

  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On Resistance Rds(on) of 44mohm at Vgs of 10V
  • Power dissipation Pd of 130W at 25°C
  • Continuous drain current Id of 33A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C
SKU: RDNA-19.4

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35.40 (Inc. GST)
30.00 (+18% GST Extra)

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  • Pick up from the RoboticsDNA Store in Pune / Dunzo

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  • Same Day Delivery in Pune

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3-5 Days

Rs. 149

  • via Delhivery.com (Surface Mode)

Our courier will deliver to the specified address

4-7 Days

Rs. 69

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Description

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.

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Package Includes:

1 x IRF540N (TO-220-3) MOSFET

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