2N7000 MOSFET

Features:

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified

• Number of Channels : 1 Channel
• Transistor Polarity : P-Channel
• Drain-Source Breakdown Voltage (Vds) :-100V
• Continuous Drain Current (Id) : -14A
• Drain-Source Resistance (Rds On)  :0.20Ohms
• Gate-Source Voltage (Vgs) : 20V
• Gate Charge (Qg) : 58 nC
• Operating Temperature Range  :  -55 – 175°C
• Power Dissipation (Pd) :  79W

Specification:

• Drain to source voltage Vds is 100V
• Gate to source voltage is ±20V
• On Resistance Rds(on) of 44mohm at Vgs of 10V
• Power dissipation Pd of 130W at 25°C

Specifications:

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds):-100V
• Continuous Drain Current (Id): -23A
• Drain-Source Resistance (Rds On): 0.117Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 97 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd) : 140W

Specifications:-

• Type: n-channel
• Drain-to-Source Breakdown Voltage: 55 V
• Gate-to-Source Voltage, max: ±20 V
• Drain-Source On-State Resistance, max: 70.000 Ohm
• Continuous Drain Current: 17 A
• Total Gate Charge: 13.3 nC
• Power Dissipation: 45 W
• Package: TO-220AB

Specification:

• Voltage: 3.3V and 5V
• Port: Digital level
• Output load voltage: 0-24V
• Platform: MCU, ARM , Raspberry Pi
• Size: 33*24mm
• Weight: 10 g