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2N7000 MOSFET

10.62 (Inc. GST)9.00 (+18% GST Extra)

Specifications:

  • Small signal N-Channel MOSFET
  • Drain-Source Voltage (VDS) is 60V
  • Continuous Drain Current (ID) is 200mA
  • Pulsed Drain Current (ID-peak) is 500mA
  • Gate threshold voltage (VGS-th) is 3V
  • Gate-Source Voltage is (VGS) is ±20V
  • Turn ON and Turn off time is 10ns each.
  • Available in To-92 Package

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SKU: RDNA-140D.1 Category:

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Description

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Package Includes :

1 x 2N7000 MOSFET

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